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A comprehensive overview of the temperature-dependent modeling of the high-power GaN HEMT technology using mm-wave scattering parameter measurements
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged
as an attractive candidate for high-frequency, high-power, and high-temperature …
as an attractive candidate for high-frequency, high-power, and high-temperature …
A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trap** effects
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT)
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
Modeling GaN: powerful but challenging
As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …
multiple commercial device manufacturers, the demand for improved nonlinear models has …
An Extensive Experimental Analysis of the Kink Effects in and for a GaN HEMT
This paper, for the first time, analyzes in detail the kink phenomenon in S 22 as observed in
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
Passive intermodulation due to self-heating in printed transmission lines
This paper proposes a mechanism by which third-order intermodulation distortion, due to
self-heating, is generated in transmission lines. This work shows how transmission lines …
self-heating, is generated in transmission lines. This work shows how transmission lines …
Operational improvement of AlGaN/GaN high electron mobility transistor by an inner field-plate structure
HT Kwak, SB Chang, HJ Kim, KW Jang, HS Yoon… - Applied Sciences, 2018 - mdpi.com
In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is
presented to improve its electrical operation by employing an inner field-plate (IFP) structure …
presented to improve its electrical operation by employing an inner field-plate (IFP) structure …
[HTML][HTML] Temperature-sensitivity of two microwave hemt devices: Algaas/gaas vs. algan/gan heterostructures
The goal of this paper is to provide a comparative analysis of the thermal impact on the
microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and …
microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and …
This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trap** …
electron mobility transistors. A global state-space formulation describes charge trap** …
High-periphery GaN HEMT modeling up to 65 GHz and 200° C
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors
A scalable eletrothermal model is necessary for a high‐power amplifier design for accurate
accounting of thermal effects. Toward this end, this study presents a scalable large‐signal …
accounting of thermal effects. Toward this end, this study presents a scalable large‐signal …