A new approach to microwave power amplifier design based on the experimental characterization of the intrinsic electron-device load line
This paper presents a new original approach to power amplifier design, which is mainly
based on low-frequency nonlinear empirical electron device (ED) characterization. The …
based on low-frequency nonlinear empirical electron device (ED) characterization. The …
Scalable nonlinear FET model based on a distributed parasitic network description
D Resca, A Santarelli, A Raffo… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
Electron device modeling requires accurate descriptions of parasitic passive structures
connecting the intrinsic electron device to the external world. In conventional approaches …
connecting the intrinsic electron device to the external world. In conventional approaches …
A three-port nonlinear dynamic behavioral model for supply-modulated RF PAs
GP Gibiino, G Avolio, DMMP Schreurs… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
We propose a three-port nonlinear dynamic behavioral model for supply-modulated power
amplifiers (PAs). The proposed model not only accounts for the radio frequency (RF) input …
amplifiers (PAs). The proposed model not only accounts for the radio frequency (RF) input …
Accurate EM-based modeling of cascode FETs
Cascode field-effect transistors (FETs) are widely used in the design of monolithic
microwave integrated circuits (MMICs), owing to their almost unilateral and broadband …
microwave integrated circuits (MMICs), owing to their almost unilateral and broadband …
Waveform engineering: State‐of‐the‐art and future trends
The term waveform engineering denotes all those circuit design techniques that are based
on sha** the transistor voltage and current waveforms. From a general perspective, these …
on sha** the transistor voltage and current waveforms. From a general perspective, these …
Nonlinear embedding and de‐embedding techniques for large‐signal fet measurements
The manuscript presents a comparison between two nonlinear procedures oriented to the
investigation of the intrinsic I/V dynamic characteristics at a transistor's current‐generator …
investigation of the intrinsic I/V dynamic characteristics at a transistor's current‐generator …
A new approach to class-E power amplifier design
A Musio, V Vadalà, F Scappaviva… - 2011 Workshop on …, 2011 - ieeexplore.ieee.org
An innovative, recently introduced, methodology for microwave power amplifier design, is
here extended to switching-mode Class-E amplifier operation. Such a technique is based on …
here extended to switching-mode Class-E amplifier operation. Such a technique is based on …
A nonquasi-static empirical model of electron devices
A Santarelli, V Di Giacomo, A Raffo… - IEEE transactions on …, 2006 - ieeexplore.ieee.org
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a
perturbed charge-controlled approach. The model is based on the definition of a virtual …
perturbed charge-controlled approach. The model is based on the definition of a virtual …
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime
Electron device degradation, although not directly accounted for, represents a key issue in
microwave circuit design. This is especially true when the particular applications involved …
microwave circuit design. This is especially true when the particular applications involved …
A procedure for the extraction of a nonlinear microwave GaN FET model
In this paper, we describe an extraction procedure of nonlinear models for microwave field‐
effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we …
effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we …