An overview of normally-off GaN-based high electron mobility transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …
become mandatory to improve the energy efficiency of devices and modules and to reduce …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
The drain induced dynamic threshold voltage () shift of a-GaN gate HEMT with a Schottky
gate contact is investigated, and the underlying mechanisms are explained with a charge …
gate contact is investigated, and the underlying mechanisms are explained with a charge …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z **ng, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Highly scaled GaN complementary technology on a silicon substrate
This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …
substrate to push its performance limits for circuit-level applications. The highly scaled self …
Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-
electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias …
electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias …