[PDF][PDF] Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology
A Krishnamurthya, DV Reddyb, E Radhammac… - International Journal of …, 2023 - ije.ir
In this paper, the impact of the undoped and recessed gate structure on the performance of
the silicon carbide metal semiconductor field effect transistor is presented. The importance of …
the silicon carbide metal semiconductor field effect transistor is presented. The importance of …
Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets
In this paper, a new efficient technique is used in silicon-on-insulator metal–semiconductor
field-effect transistors (SOI MESFETs) to simultaneously increase the breakdown voltage …
field-effect transistors (SOI MESFETs) to simultaneously increase the breakdown voltage …
Carrier trap and their effects on the surface and core of AlGaN/GaN nanowire wrap-gate transistor
SPR Mallem, P Puneetha, DY Lee, Y Kim, HJ Kim… - Nanomaterials, 2023 - mdpi.com
We used capacitance–voltage (C–V), conductance–voltage (G–V), and noise
measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN …
measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN …
Temperature-dependent carrier transport in GaN nanowire wrap-gate transistor
For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier
transport mechanisms in nanowires. Here, we examine how temperature affects the …
transport mechanisms in nanowires. Here, we examine how temperature affects the …
Optimizing AlGaN/GaN MOS-HEMT Architecture for Enhanced Sensing of Neutral and Charged Biomolecules
Abstract A dielectric modulated MOS-HEMT structure for the detection of neutral and
charged bio-molecules is presented. The structure embedding a cavity region of 500 nm …
charged bio-molecules is presented. The structure embedding a cavity region of 500 nm …
Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment
This paper has conducted a thorough investigation of InAlN HEMT using Silvaco TCAD
Single Event Upset (SEU) module, which captures the degradation brought on by the heavy …
Single Event Upset (SEU) module, which captures the degradation brought on by the heavy …
High-K dielectric-modulated dual-cavity MOSHEMT with III–V nitride GaN/AlGaN semiconductors: application as biosensor
In this paper, the authors developed a novel detection technique based on a dielectric
modulated-dual cavity metal–oxide–semiconductor high electron mobility transistor (DMDC …
modulated-dual cavity metal–oxide–semiconductor high electron mobility transistor (DMDC …
Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector
In this manuscript, a Stack Engineered Junctionless Accumulation Nanowire FET (SE-JAM-
NW FET) has been proposed for low-power and high sensitivity phosphine (PH 3) gas …
NW FET) has been proposed for low-power and high sensitivity phosphine (PH 3) gas …
Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect
S Sun, Y Zhang, Y Si, J **ong, X Luo - Journal of Electronic Materials, 2024 - Springer
A novel AlGaN/GaN high-electron mobility transistor (HEMT) is put forward to promote its
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …