Neutron radiation induced soft error rates for an adjacent-ECC protected SRAM in 28 nm CMOS
We report on measured neutron radiation induced soft error rates (SER) for an academic, full-
custom, low-power 75 kb SRAM macro in a commercial 28 nm CMOS process protected with …
custom, low-power 75 kb SRAM macro in a commercial 28 nm CMOS process protected with …
A 1MHz 256kb Ultra Low Power Memory Macro for Biomedical Recording Applications in 22nm FD-SOI Using FECC to Enable Data Retention Down to 170mV Supply …
B Vanhoof, W Dehaene - … on Circuits and Systems I: Regular …, 2023 - ieeexplore.ieee.org
In biomedical sensor platforms, low energy consumption is of utmost importance to extend
battery life. A dominant contributor in the energy budget of such platforms is the always-on …
battery life. A dominant contributor in the energy budget of such platforms is the always-on …
Design and evaluation of neale-based multi-bit adjacent error-correcting codec for sram
Due to scaling in CMOS technology, multiple bit upsets (MBUs) have been widely occurred
in memories. As a result, multiple adjacent bits of memories are corrupted and valuable …
in memories. As a result, multiple adjacent bits of memories are corrupted and valuable …
SRAM with stability monitoring and body bias tuning for biomedical applications
B Vanhoof, W Dehaene - IEEE Solid-State Circuits Letters, 2022 - ieeexplore.ieee.org
This work presents a novel low-leakage SRAM architecture with always-retention and local
wake-up. To tackle the large design margins in deep submicron technology nodes, it …
wake-up. To tackle the large design margins in deep submicron technology nodes, it …
A Configurable Real-Time Self-Test and Repair Engine for Improving the Reliability and Functional Safety of RAM Arrays
X He, Y Li, L Du, Y Du - 2024 9th International Conference on …, 2024 - ieeexplore.ieee.org
Hard and soft errors in embedded memories have become a serious reliability issue in IoT,
industrial, automotive, and other devices with stringent requirements for operating …
industrial, automotive, and other devices with stringent requirements for operating …
Multi-bit-upset memory using new error correction code methodology
TM Rohde… - 2020 IEEE 11th Latin …, 2020 - ieeexplore.ieee.org
Multi-Bit-Upset Memory Using New Error Correction Code Methodology Page 1 Multi-Bit-Upset
Memory Using New Error Correction Code Methodology Tiago Mallmann Rohde …
Memory Using New Error Correction Code Methodology Tiago Mallmann Rohde …
Ultra-low Leakage Power SRAM for Biomedical and IoT Applications
B Vanhoof, W Dehaene - 2024 - lirias.kuleuven.be
The Internet of Things (IoT) has brought about a huge growth in connected smart devices.
These devices are mostly battery operated, but have low operating speed requirements …
These devices are mostly battery operated, but have low operating speed requirements …
[KIRJA][B] Synergism between single event effects and total ionising dose
ACR Dyer - 2015 - search.proquest.com
The space industry is continuing to use commercial off the shelf (COTS) devices in satellites
where the ionising radiation environment poses a threat. For device qualification, their single …
where the ionising radiation environment poses a threat. For device qualification, their single …