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Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots
AJ Nozik - Annual review of physical chemistry, 2001 - annualreviews.org
▪ Abstract Photoexcitation of a semiconductor with photons above the semiconductor band
gap creates electrons and holes that are out of equilibrium. The rates at which the …
gap creates electrons and holes that are out of equilibrium. The rates at which the …
[PDF][PDF] In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
W Seifert, N Carlsson, M Miller, ME Pistol… - Progress in Crystal …, 1996 - academia.edu
1. Introduction Outline: 2. Phenomenology of the 2D-3D transition 2.1. 3D morphology as a
consequence of lattice mismatch 2.2. H Page 1 ( ~ Pergamon Prog. Crystal Growth and Charact …
consequence of lattice mismatch 2.2. H Page 1 ( ~ Pergamon Prog. Crystal Growth and Charact …
Regulated and entangled photons from a single quantum dot
We propose a new method of generating nonclassical optical field states. The method uses
a semiconductor device, which consists of a single quantum dot as active medium …
a semiconductor device, which consists of a single quantum dot as active medium …
[KNJIGA][B] Optical properties of semiconductor nanocrystals
SV Gaponenko - 1998 - books.google.com
Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum
dots, exhibit fascinating behavior and have a multitude of potential applications, especially …
dots, exhibit fascinating behavior and have a multitude of potential applications, especially …
Size-dependent spectroscopy of InP quantum dots
The spectroscopic behavior of colloidal InP quantum dots (QDs) has been investigated as a
function of the mean QD diameter (which ranged from 26 to 60 Å). Absorption spectra show …
function of the mean QD diameter (which ranged from 26 to 60 Å). Absorption spectra show …
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
With the rapid development of technologies for the fabrication of, as well as applications of
low-dimensional structures, the demands on characterization techniques increase. Spatial …
low-dimensional structures, the demands on characterization techniques increase. Spatial …
Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures
Photoluminescence (PL) spectroscopy has been performed on a set of self‐assembled InSb,
GaSb, and AlSb quantum dot (QD) heterostructures grown on GaAs. Strong emission bands …
GaSb, and AlSb quantum dot (QD) heterostructures grown on GaAs. Strong emission bands …
[PDF][PDF] Excited states of individual quantum dots studied by photoluminescence spectroscopy
The photoluminescence from individual InP quantum dots embedded in a matrix of GaInP
has been studied. In addition to the ground state emission that consists of several peaks, we …
has been studied. In addition to the ground state emission that consists of several peaks, we …
Optical anisotropy in self-assembled InP quantum dots
M Sugisaki, HW Ren, SV Nair, K Nishi, S Sugou… - Physical review B, 1999 - APS
Strong optical anisotropy is observed in the photoluminescence (PL) bands of both the InP
self-assembled quantum dots and the Ga 0.5 In 0.5 P matrix. From the linearly polarized PL …
self-assembled quantum dots and the Ga 0.5 In 0.5 P matrix. From the linearly polarized PL …
Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers
Thin layers of InSb, GaSb and AlSb were grown on GaAs (0 0 1) by molecular beam epitaxy
and characterized in situ with scanning tunneling microscopy. All three materials exhibit a …
and characterized in situ with scanning tunneling microscopy. All three materials exhibit a …