III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

An overview of the rapid progress in the developments of the inorganic light emitting diode
(LED) technology is presented. Innovative structures and designs of the device have led to …

Nearly full color emission has been achieved using quantum dot (QD)–polymer composites.
The fluorescence of the resulting composites spans the entire visible range with narrow …

Using micro-Raman spectroscopy, we have studied the vibrational properties of GaN and
Al0. 5Ga0. 5N/GaN long period superlattices SLs grown on Si111. Crack-free areas of GaN …

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to
maintain single photon emission up to room temperature. Here, we report on the evolution of …

Large protein‐based micellar aggregates (see Figure) are reversibly formed upon self‐
assembly of the amphiphilic diblock copolymer—based on elastin‐mimetic peptide …

Our recent progress in GaN-based quantum dots (QDs) for optoelectronics application is
discussed. First, we discussed an impact of the use of GaN-based QDs on semiconductor …

Wide bandgap III-nitride quantum dots (QDs) are promising materials for the realization of
solid-state single-photon sources, especially operating at room temperature. However, so far …

Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron
diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN …