Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

In the field of high-power electronics, gallium oxide (Ga 2 O 3) is attracting attention due to
its wide bandgap and ability to be doped n-type. Point defects, including vacancies …

ME Ingebrigtsen, A. Yu. Kuznetsov, BG Svensson, G. Alfieri, A. Mihaila, U. Badstübner, A.
Perron, L. Vines, JB Varley; Impact of proton irradiation on conductivity and deep level …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

Deep-level defects in β-Ga2O3 that worsen the response speed and dark current (I d) of
photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ …

This work explores the luminescence properties of self-trapped holes and impurity-related
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …

Understanding the unique properties of ultra-wide band gap semiconductors requires
detailed information about the exact nature of point defects and their role in determining the …