The recent studies on nanotwinned (NT) and hierarchical nanotwinned (HNT) face-centered
cubic (FCC) metals are presented in this review. The HNT structures have been supposed …

A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …

Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

The structural and optical properties of three different kinds of GaAs nanowires with 100%
zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety …

Polarization-dependent Raman scattering experiments realized on single GaAs nanowires
with different percentages of zinc-blende and wurtzite structure are presented. The selection …

The carrier transport dynamics at the surface/interface of semiconductors determine the
electronic and optical properties of devices. Thus, precise control of their dynamic processes …

A method for the direct correlation at the nanoscale of structural and optical properties of
single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires …

Incorporation of catalyst atoms during the growth process of semiconductor nanowires
reduces the electron mean free path and degrades their electronic properties. Aberration …

Aberration corrected scanning transmission electron microscopy (STEM) with high angle
annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) …