Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
GeSn alloys hold great promise as high-performance, low-cost, near-and short-wavelength
infrared photodetectors with the potential to replace the relatively expensive and currently …
infrared photodetectors with the potential to replace the relatively expensive and currently …
[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band
The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …
generation optical communication. As a result, silicon photonic platforms acquire great …
Design and optimization of GeSn waveguide photodetectors for 2-µm band silicon photonics
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …
Design and modeling of high-performance DBR-based resonant-cavity-enhanced GeSn photodetector for fiber-optic telecommunication networks
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection
Recently, high-performance GeSn photodiodes (PDs) with external light illuminated on the
device's top surface have been demonstrated on various platforms. However, for image …
device's top surface have been demonstrated on various platforms. However, for image …
GeSn-based multiple-quantum-well photodetectors for mid-infrared sensing applications
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …
generation ultra-compact spectroscopic systems for various applications such as label-free …
Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
Silicon-based electronic-photonic integrated circuits, which are compatible with state-of-the-
art complementary metal-oxide-semiconductor processes, offer promising opportunities for …
art complementary metal-oxide-semiconductor processes, offer promising opportunities for …
Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
YC Tai, S An, PR Huang, YT Jheng, KC Lee… - Nanoscale, 2023 - pubs.rsc.org
Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for
wearable applications, including health-care monitoring and biomedical detection …
wearable applications, including health-care monitoring and biomedical detection …
Boosting performances of ZnO microwire homojunction ultraviolet self-powered photodetector by coupled interfacial engineering and plasmonic effects
K Tang, S Sha, P Wan, Y Zhai, C Kan, D Shi… - Science China …, 2024 - Springer
A highly sensitive self-biased ultraviolet (UV) photodetector is largely desirable in practical
applications. This work develops a one-dimensional ZnO homojunction photodiode, which …
applications. This work develops a one-dimensional ZnO homojunction photodiode, which …