Chalcogenide lone pair semiconducting materials are important materials due to their
prospective applications in thermoelectrics, phase change memories, topological insulators …

Electrical measurements have been carried out on a-Se85− xTe15Sbx (x= 0, 2, 4, 6 and
10at.%) thin films. The dark conductivity (σd), photoconductivity (σph) increase and …

Single crystal GeSe 2 nanobelts (NBs) were successfully grown using chemical vapor
deposition techniques. The morphology and structure of the nanostructures were …

In this paper, we show for the first time that ultrafast light illumination can induce an
unusually broad transient optical absorption (TA), spanning of≈ 200 nm in the sub-bandgap …

Electrical measurements are done on Se 85− x Te 15 In x (x= 0, 2, 4, 6 and 10 at%) thin
films. The dark conductivity (σ d) increases and the activation energy (ΔE d) decreases as …

Single crystalline stepped-surfaced GeSe2 nanobelts (NBs) were synthesized by vapor
transport and deposition method with the presence of Au catalyst. The NBs were grown via …

In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films
deposited by thermal and e-beam evaporation techniques were carried out by measuring …

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell
under polychromatic illumination and a constant magnetic field effect. By use of the …

The temperature dependence of electrical conductivity measurements has been studied in
the dark as well as in the presence of light in vacuum evaporated thin films of (Ge 20 Se 80) …

Steady state and transient photoconductivity has been measured on Ge20Se80− xInx (x= 0,
5, 10, 15, 20) vacuum evaporated thin films. Study of temperature dependent dark …