Recent progresses on physics and applications of vanadium dioxide

K Liu, S Lee, S Yang, O Delaire, J Wu - Materials Today, 2018 - Elsevier
As a strongly correlated electron material, vanadium dioxide (VO 2) has been a focus of
research since its discovery in 1959, owing to its well-known metal–insulator transition …

On the energy modulation of daytime radiative coolers: A review on infrared emissivity dynamic switch against overcooling

G Ulpiani, G Ranzi, KW Shah, J Feng, M Santamouris - Solar energy, 2020 - Elsevier
Passive daytime radiative cooling represents one of the boldest answers to tackle the future
cooling needs of the built environment and to mitigate urban heat island effects. Recent …

[HTML][HTML] Challenges in materials and devices for resistive-switching-based neuromorphic computing

J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …

Evolution of metallicity in vanadium dioxide by creation of oxygen vacancies

Z Zhang, F Zuo, C Wan, A Dutta, J Kim, J Rensberg… - Physical Review …, 2017 - APS
Tuning of the electronic state of correlated materials is key to their eventual use in advanced
electronics and photonics. The prototypical correlated oxide (VO 2) is insulating at room …

Extended metal-insulator crossover with strong antiferromagnetic spin correlation in half-filled 3d Hubbard model

YF Song, Y Deng, YY He - Physical Review Letters, 2025 - APS
The Hubbard model at temperatures above the Néel transition, despite being a paramagnet,
can exhibit rich physics due to the interplay of Fermi surface, on-site interaction U and …

Basic aspects of the metal–insulator transition in vanadium dioxide VO: a critical review

JP Pouget - Comptes Rendus. Physique, 2021 - comptes-rendus.academie-sciences …
Le dioxyde de vanadium présente une transition métal–isolant (TMI) du premier ordre à 340
K (= TMI) d'une structure rutile (R) à une structure monoclinique (M1). Le mécanisme de …

Inherent stochasticity during insulator–metal transition in VO2

S Cheng, MH Lee, R Tran, Y Shi, X Li… - Proceedings of the …, 2021 - pnas.org
Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator–metal transition,
has great potential in applications of neuromorphic computing devices. Although its volatile …

Modeling of the electrical conductivity, thermal conductivity, and specific heat capacity of

J Ordonez-Miranda, Y Ezzahri, K Joulain, J Drevillon… - Physical Review B, 2018 - APS
Based on Bruggeman's symmetric effective-medium formula and an explicit expression
derived for the temperature evolution of the volume fractions of the metallic and isolating …

Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection

G Wei, X Fan, Y **ong, C Lv, S Li… - Applied physics express, 2022 - iopscience.iop.org
In this work, the phase transition of a highly disordered amorphous VO 2 film is studied. It is
found that the electronic transport behavior follows the Arrhenius or Vogel–Tammann …

[HTML][HTML] Resistive switching localization by selective focused ion beam irradiation

N Ghazikhanian, J del Valle, P Salev, R El Hage… - Applied Physics …, 2023 - pubs.aip.org
Materials displaying resistive switching have emerged as promising candidates for
implementation as components for neuromorphic computing. Under an applied electric field …