This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and
state-of-the-art results in the literature. To reach watt-level output power from a single-chip …

A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …

Highly linear and efficient CMOS cascode power amplifiers (PAs) are developed for handset
applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of …

This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-
PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is …

An envelope-tracking (ET) CMOS power amplifier (PA) is fabricated using a 0.18-μm CMOS
process. The module containing the supply modulator, the PA, and the output transformer is …

A differential cascode CMOS power amplifier (PA) with a supply modulator for envelope
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …

A fully integrated envelope elimination and restoration (EER) CMOS power amplifier (PA)
has been developed for WCDMA and LTE handsets. EER is a supply modulation technique …

This paper presents a hybrid supply modulator (SM) including a buck-boost (BB) converter,
which has wide battery operating range for cellular envelope tracking (ET) applications. The …

A fully integrated linear CMOS power amplifier (PA) for the broadband operation is
developed for handset applications. This amplifier can handle a wideband signal. To …

A CMOS saturated power amplifier (PA) is developed for optimally implementing the
envelope-tracking (ET) transmitter. The CMOS saturated PA is used to maximize the …