There is rapidly expanding interest in exploiting the spin of valence-band holes rather than
conduction-band electrons for spin qubit semiconductor circuits composed of coupled …

Recent experimental and theoretical data on modification of the atomic and electronic
structures of the surface of different III–V semiconductors by electrolyte solutions are …

Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is
important for fundamental studies of material properties as well as for quantum information …

A key task in the emerging field of bioelectronics is the transduction between ionic/protonic
and electronic signals at high fidelity. This is a considerable challenge since the two carrier …

Using femtosecond time-and angle-resolved photoemission spectroscopy, we explore the
out-of-equilibrium dynamics of surface fermions in the topological system Bi 2 Te 2 Se. We …

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure.
The interdot coupling can be tuned over a wide range, from formation of a large single dot to …

We compare the electronic characteristics of nanowire field-effect transistors made using
single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter …

Обобщены экспериментальные и теоретические результаты последних лет по
модификации атомной и электронной структуры поверхности различных …

Understanding the hyperfine and spin-orbit interactions is important for eg quantum
information processing with spin qubits. In this thesis, we investigate these interactions in …

Graphene field effect transistors with an Al 2 O 3 gate dielectric are fabricated on H-
intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour …