CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high‐
speed computation and communication for its capability of high‐power signal amplification …

In today's highly competitive semiconductor industry, and due to the accelerating pace of
technology development, the integration of new and disruptive solutions to address process …

Dual-junction solar cells have permitted to augment markedly efficiency of solar energy
harvesting. This is because they involve a combination of III-V semiconductor materials with …

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings
new challenges related to the metastability of this class of materials. As a matter of fact …

Defect evolution and dopant activation are intimately related to the use of ion implantation
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …

Heavy do** of Ge is crucial for several advanced micro-and optoelectronic applications,
but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a …

We have investigated the recrystallization behavior of the argon (Ar) bubble-rich amorphous
germanium (a-Ge) by utilizing the excimer laser annealing (ELA) in comparison with the …

In this work, we present the results obtained using a CO 2 laser source at 10.6 μm
wavelength for the study of the non-melt annealing of phosphorus doped germanium in the …