Theoretical insights into photoinduced charge transfer and catalysis at oxide interfaces
As the world's population increases and substantial industrial growth continues, the energy
demands of society increase rapidly. Although the earth's oil, natural gas, and coal deposits …
demands of society increase rapidly. Although the earth's oil, natural gas, and coal deposits …
Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges
Artificial photosynthesis, ie the chemical transformation of sunlight, water and carbon dioxide
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …
Alignment of redox levels at semiconductor–water interfaces
We determine the band alignment between various semiconductors and liquid water by
combining molecular dynamics (MD) simulations of atomistic interface models, electronic …
combining molecular dynamics (MD) simulations of atomistic interface models, electronic …
Nonadiabatic dynamics of positive charge during photocatalytic water splitting on GaN (10-10) surface: charge localization governs splitting efficiency
AV Akimov, JT Muckerman… - Journal of the American …, 2013 - ACS Publications
Photochemical water splitting is a promising avenue to sustainable, clean energy and fuel
production. Gallium nitride (GaN) and its solid solutions are excellent photocatalytic …
production. Gallium nitride (GaN) and its solid solutions are excellent photocatalytic …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Pit assisted oxygen chemisorption on GaN surfaces
A comprehensive analysis of oxygen chemisorption on epitaxial gallium nitride (GaN) films
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
Photocatalytic water oxidation at the GaN (101̅0)− water interface
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a
sacrificial electron scavenger, as a photocatalyst for solar water oxidation, producing H+ and …
sacrificial electron scavenger, as a photocatalyst for solar water oxidation, producing H+ and …
ZnO (1010) surface Hydroxylation under ambient water vapor
The interaction of water vapor with a single crystal ZnO (101̅0) surface was investigated
using synchrotron-based ambient pressure X-ray photoelectron spectroscopy (APXPS). Two …
using synchrotron-based ambient pressure X-ray photoelectron spectroscopy (APXPS). Two …
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the
electronic and chemical properties of the H2O/GaN (0001) interface under elevated …
electronic and chemical properties of the H2O/GaN (0001) interface under elevated …
Water aggregation and dissociation on the ZnO (101 [combining macron] 0) surface
S Kenmoe, PU Biedermann - Physical Chemistry Chemical Physics, 2017 - pubs.rsc.org
A comprehensive search for stable structures in the low coverage regime (0–1 ML) and at 2
ML and 3 ML using DFT revealed several new aggregation states of water on the non-polar …
ML and 3 ML using DFT revealed several new aggregation states of water on the non-polar …