The paper consisting of two parts presents a detailed consideration of the proposed method
of discrete mobility spectrum analysis and its application for studying the parameters of …

Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II
superlattices for long wavelength infrared (LWIR) detection have been extracted from …

In this paper the recently developed high-resolution mobility spectrum analysis is
demonstrated. In a number of simulations the high resolution of the algorithm is …

We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-
keV boron-ion implantation in vacancy-doped p-type Hg 0.769 Cd 0.231 Te without …

In this work, we review the results of mobility spectrum analysis (MSA) based studies of
electronic transport in GaN-based high electron mobility field effect transistor (HEMT) …

The paper, which consists of two parts, considers in detail the method of discrete mobility
spectrum analysis (DMSA) proposed by the authors as well as its application to determine …

A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its
application to transport studies in HgCdTe is given. First, a brief review of the methods of the …

In this work, we report results of a study of electronic transport in nominally undoped p-type
GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb …

Наночастицы оксида титана, обладающие термической и химической стабильностью,
широкой запрещенной зоной и низкой токсичностью, являются наиболее …

Accurate p-type do** of the active region in III-V infrared detectors is essential for
optimizing the detector design and overall performance. While most III-V detector absorbers …