A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET

R Marani, AG Perri - Current Nanoscience, 2019 - ingentaconnect.com
In this paper, we review a procedure to study the effects of temperature in the design of A/D
circuits based on CNTFETs. At first, we briefly describe a compact model, already proposed …

critical analysis of CNTFET-based electronic circuits design

R Marani, AG Perri - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
In this review we present many design of CNTFET-based circuits, already proposed by us
and here critically examined. For some of these, we compare the performance of proposed …

A simulation study of analogue and logic circuits with CNTFETs

R Marani, AG Perri - ECS Journal of Solid State Science and …, 2016 - iopscience.iop.org
In this paper we have implemented the semi-empirical compact model for CNTFETs already
proposed by us to simulate typical analogue circuits and logic blocks both in SPICE, using …

Analysis of Limits of CNTFET Devices through the Design of a Differential Amplifier

G Gelao, R Marani, AG Perri - … Journal of Solid State Science and …, 2021 - iopscience.iop.org
In this paper, in order to analyze the limits of CNTFET devices, we study the behavior of a
differential amplifier based on CNTFET for application between 50 GHz and 500 GHz …

Noise effects in the Design of Digital Circuits Based on CNTFET

R Marani, AG Perri - ECS Journal of Solid State Science and …, 2022 - iopscience.iop.org
In this paper initially we present two CNTFET models: the first, already proposed by us and
the second the Stanford model, recalling our method to match the output characteristics and …

Analysis of CNTFETs operating in subthreshold region for low power digital applications

R Marani, AG Perri - ECS Journal of Solid State Science and …, 2015 - iopscience.iop.org
The aim of this paper is to characterize and to model the behavior of Carbon NanoTube
Field Effect Transistors (CNTFETs) operating in sub-threshold region for low power …

Editors' choice—Effects of parasitic elements of interconnection lines in CNT embedded integrated circuits

R Marani, AG Perri - ECS Journal of Solid State Science and …, 2020 - iopscience.iop.org
In this paper we present a study of the effects of parasitic elements of interconnection lines in
integrated circuits (IC) where Carbon NanoTubes (CNTs) are embedded. In particular the …

A compact noise model for C-CNTFETs

R Marani, G Gelao, AG Perri - … Journal of Solid State Science and …, 2017 - iopscience.iop.org
In this paper we present a compact noise model for C-CNTFETs implemented in Verilog-A.
After a brief description of the main noise sources existing in CNTFETs, which constitute a …

Effect of CNT parameter variations on CNTFET amplifier performance

G Gelao, R Marani, AG Perri - … Journal of Solid State Science and …, 2023 - iopscience.iop.org
In this paper we propose a procedure to study the dependence of a CNTFET amplifier
performance on CNT parameters that fully identify the geometrical properties of a regular …

Temperature Dependence of IV‎ Characteristics in CNTFET Models: A‎ Comparison

R Marani, AG Perri - International Journal of Nanoscience and …, 2021 - ijnnonline.net
In this paper we present a comparison of temperature dependence of IV characteristics in
Carbon Nanotube Field Effect Transistor (CNTFET) models proposed in the literature in …