Based on the actual packaging structure of insulated gate bipolar transistor (IGBT) module,
this article establishes the power loss model, and analyzes the influence of the position of …

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor
field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper …

This manuscript presents the most recent results and findings to identify bond wire lift-offs
and surface defects in high-power isolated gate bipolar junction transistor (IGBT) modules …

Bond wire fatigue is a prominent problem affecting the reliability of IGBT modules and power
electronic converters, and has thus received much attention in the research community. As …

In this paper, a new method of packaging failure detection based on magnetic field
measurements is evaluated. Based on pre-emptive simulations, a valid area for a magneto …

IGBT modules are core components of power electronic converters, and their reliability has
gained significant attention. Among various reliability concerns, bond wire fatigue is a …

In this paper, a novel method of wire bond failure detection in a three-phase inverter during
operation of an electric motor based on magnetic field measurements is applied and …

With the emerging wide bandgap (WBG) semiconductor development, the increasing power
density and efficiency of power electronic converters may cause more switching oscillation …

To achieve low-cost detection of bond wire lift-off for power devices without sensor circuits
made of discrete components on PCB, the world's first fully integrated bond wire lift-off …

Bond wire fatigue is a prominent problem in the reliability of IGBT modules and power
electronic converter. The fatigue evaluation method of IGBT bond wire based on non …