Review on spintronics: Principles and device applications

A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu… - Journal of Magnetism …, 2020 - Elsevier
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …

Future perspectives for spintronic devices

A Hirohata, K Takanashi - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …

Single-electron current sources: Toward a refined definition of the ampere

JP Pekola, OP Saira, VF Maisi, A Kemppinen… - Reviews of Modern …, 2013 - APS
The control of electrons at the level of the elementary charge e was demonstrated
experimentally already in the 1980s. Ever since, the production of an electrical current ef, or …

Silicon single-electron devices

Y Takahashi, Y Ono, A Fujiwara… - Journal of physics …, 2002 - iopscience.iop.org
Single-electron devices (SEDs) are attracting a lot of attention because of their capability of
manipulating just one electron. For their operation, they utilize the Coulomb blockade (CB) …

Hydrogenic spin quantum computing in silicon: a digital approach

AJ Skinner, ME Davenport, BE Kane - Physical review letters, 2003 - APS
We suggest an architecture for quantum computing with spin-pair encoded qubits in silicon.
Electron-nuclear spin-pairs are controlled by a dc magnetic field and electrode-switched on …

Valley polarization in Si (100) at zero magnetic field

K Takashina, Y Ono, A Fujiwara, Y Takahashi… - Physical review …, 2006 - APS
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO 2/Si
(100)/SiO 2 quantum well, is examined through transport measurements. We demonstrate …

Manipulation and detection of single electrons for future information processing

Y Ono, A Fujiwara, K Nishiguchi, H Inokawa… - Journal of Applied …, 2005 - pubs.aip.org
The ultimate goal of future information processing might be the realization of a circuit in
which one bit is represented by a single electron. Such a challenging circuit would comprise …

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

A Fujiwara, H Inokawa, K Yamazaki, H Namatsu… - Applied Physics …, 2006 - pubs.aip.org
We have achieved the operation of single-electron tunneling (SET) transistors with gate-
induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect …

Spin state tomography of optically injected electrons in a semiconductor

H Kosaka, T Inagaki, Y Rikitake, H Imamura… - Nature, 2009 - nature.com
Spin is a fundamental property of electrons, with an important role in information storage,,,.
For spin-based quantum information technology, preparation and read-out of the electron …

Current quantization due to single-electron transfer in Si-wire charge-coupled devices

A Fujiwara, NM Zimmerman, Y Ono… - Applied physics …, 2004 - pubs.aip.org
We observe a quantized current due to single-electron transfer in a small charge-coupled
device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a …