AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy
In this work, we report the growth, fabrication, and characterization of aluminum gallium
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …
Effects of geometric parameters on photoemission of AlGaN nanowire array photocathode
Z Cao, L Liu, F Lu - Materials Research Express, 2022 - iopscience.iop.org
In recent years, with the continuous development of solar blind ultraviolet photodetectors, III-
V compounds are widely used as semiconductor materials. The nanowire array structure …
V compounds are widely used as semiconductor materials. The nanowire array structure …
Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at∼ 271 nm wavelength
This work presents the theoretical study on the polarization induced p-type do** of
undoped-AlInN graded cladding layers for the deep ultra-violet laser diode (LD) emitting at …
undoped-AlInN graded cladding layers for the deep ultra-violet laser diode (LD) emitting at …
Reducing the polarization mismatch between the last quantum barrier and p-EBL to enhance the carrier injection for AlGaN-based DUV LEDs
C Chu, D Zhang, H Shao, J Che, K Tian… - Optical Materials …, 2021 - opg.optica.org
In this work, we report an AlGaN-based∼ 275 nm deep ultraviolet light-emitting diode (DUV
LED) that has AlGaN based quantum barriers with a properly large Al composition. It is …
LED) that has AlGaN based quantum barriers with a properly large Al composition. It is …