A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk… - Applied Physics …, 2005 - pubs.aip.org
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
Investigations of HfO2∕ AlGaN∕ GaN metal-oxide-semiconductor high electron mobility transistors
C Liu, EF Chor, LS Tan - Applied physics letters, 2006 - pubs.aip.org
We report the studies of Al Ga N∕ Ga N metal-oxide-semiconductor high electron mobility
transistors (MOS-HEMTs) using reactive-sputtered Hf O 2 as the gate dielectric and the …
transistors (MOS-HEMTs) using reactive-sputtered Hf O 2 as the gate dielectric and the …
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
C Liu, EF Chor, LS Tan - Semiconductor science and technology, 2007 - iopscience.iop.org
AlGaN/GaN high electron mobility transistors (HEMTs) using HfO 2 as a surface passivation
layer and metal–oxide–semiconductor HEMTs (MOS-HEMTs) using HfO 2 as gate oxide …
layer and metal–oxide–semiconductor HEMTs (MOS-HEMTs) using HfO 2 as gate oxide …
Scaling reducibility of metal oxides
The reducibility of bulk metal oxides in which the cation is in its highest oxidation state (MgO,
Sc 2 O 3, Y 2 O 3, TiO 2, m-ZrO 2, m-HfO 2, CeO 2, V 2 O 5, Nb 2 O 5, Ta 2 O 5, WO 3, CrO 3 …
Sc 2 O 3, Y 2 O 3, TiO 2, m-ZrO 2, m-HfO 2, CeO 2, V 2 O 5, Nb 2 O 5, Ta 2 O 5, WO 3, CrO 3 …
AlGaN/GaN MOS-HEMT With Dielectric and Interfacial Passivation Layer Grown by Atomic Layer Deposition
Y Yue, Y Hao, J Zhang, J Ni, W Mao… - IEEE electron device …, 2008 - ieeexplore.ieee.org
We have developed a novel AlGaN/GaN metal–oxide–semiconductor high-electron mobility
transistor using a stack gate HfO_2/Al_2O_3 structure grown by atomic layer deposition. The …
transistor using a stack gate HfO_2/Al_2O_3 structure grown by atomic layer deposition. The …
Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer …
The effects of Al 2 O 3 gate insulator grown by atomic layer deposition (ALD) system on the
two-dimensional electron gas (2DEG) transport characteristics in AlGaN/GaN metal-insulator …
two-dimensional electron gas (2DEG) transport characteristics in AlGaN/GaN metal-insulator …