Electronics based on two-dimensional materials: Status and outlook

S Zeng, Z Tang, C Liu, P Zhou - Nano Research, 2021 - Springer
Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore
and More than Moore are proposed as two paths to maintain the development of the …

Graphene‐Based Microwave Circuits: A Review

M Saeed, P Palacios, MD Wei, E Baskent… - Advanced …, 2022 - Wiley Online Library
Over the past two decades, research on 2D materials has received much interest. Graphene
is the most promising candidate regarding high‐frequency applications thus far due to is …

[HTML][HTML] Towards RF graphene devices: a review

I Colmiais, V Silva, J Borme, P Alpuim, PM Mendes - FlatChem, 2022 - Elsevier
Graphene has been targeted for a wide variety of applications due to its characteristics. It is
a zero-bandgap material, has high conductivity, and high carrier mobility, which makes it a …

A many-body approach to transport in quantum systems: from the transient regime to the stationary state

M Ridley, NW Talarico, D Karlsson… - Journal of Physics A …, 2022 - iopscience.iop.org
We review one of the most versatile theoretical approaches to the study of time-dependent
correlated quantum transport in nano-systems: the non-equilibrium Green's function (NEGF) …

Assessing the figures of merit of graphene-based radio frequency electronics: a review of GFET in RF technology

N Norhakim, HF Hawari, ZA Burhanudin - IEEE Access, 2022 - ieeexplore.ieee.org
Graphene has been extensively investigated in the context of electronic components due to
its attractive properties, such as high carrier mobility and saturation velocity. In the past …

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

F Pasadas, A Medina‐Rull, FG Ruiz, JN Ramos‐Silva… - Small, 2023 - Wiley Online Library
Exploiting ambipolar electrical conductivity based on graphene field‐effect transistors has
raised enormous interest for high‐frequency (HF) analog electronics. Controlling the device …

Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

F Pasadas, A Medina-Rull, PC Feijoo… - Nano …, 2021 - iopscience.iop.org
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that
sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity …

Reversible charge-polarity control for a photo-triggered anti-ambipolar In 2 Se 3 &WSe 2 heterotransistor

S Huang, H Chen, S Wang, Y Chen, J He, W Wang… - Nanoscale, 2023 - pubs.rsc.org
Based on the charge-polarity control, a novel anti-ambipolar heterotransistor is proposed
based on a special In2Se3&WSe2 van der Waals heterostructure. Unlike traditional logic …

Dual-mode frequency multiplier in graphene-base hot electron transistor

BW Liang, MF Li, HY Lin, KS Li, JH Chen, JM Shieh… - Nanoscale, 2023 - pubs.rsc.org
Since quantum computers have been gradually introduced in countries around the world,
the development of the many related quantum components that can operate independently …

Reconfigurable frequency multipliers based on graphene field-effect transistors

A Toral-Lopez, EG Marin, F Pasadas, MD Ganeriwala… - Discover Nano, 2023 - Springer
Run-time device-level reconfigurability has the potential to boost the performance and
functionality of numerous circuits beyond the limits imposed by the integration density. The …