This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip
applications. Increasingly, the electronic parts of silicon technology will carry out the data …

The stringent device performance specifications of advanced scaled down technologies
necessitates the implementation of high mobility substrates such as SiGe, Strained Si (sSi) …

In this work, the temperature behavior of the transport mechanisms present in Ge p+ n
junctions selectively grown in shallow trench isolation (STI) substrates is investigated …

This work investigates the role of threading dislocation densities (TDD) in the low density
regime on the vertical transport in Si 0.06 Ge 0.94 heterostructures integrated on Si (001) …

This chapter aims to review analytical techniques for the detection of electrically active
defects in semiconductor materials. In all cases, the operation principles, the strengths, and …

The relaxation mechanism of Si 1-x Ge x/Si heterostructures subjected to pulsed laser
melting was investigated by probing the pulsed laser induced epitaxy (PLIE) regime of …

In 0.53 Ga 0.47 As p+ n diodes with different densities of extended defects have been
analyzed by detailed structural and electrical characterization. The defects have been …

This letter characterizes the generation–recombination noise of Ge pFinFETs, for three
different integration schemes: shallow trench isolation (STI) first strained devices; STI last for …

An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET
devices fabricated in different shallow trench isolation (STI) processes is presented, taking …