P-channel MOSFET as ionizing radiation detector
MM Pejović, SM Pejović - Applied Radiation and Isotopes, 2023 - Elsevier
In this study, the authors examine the responses of radiation-sensitive p-channel MOSFETs
to irradiation and subsequent annealing at room temperature and higher temperatures to …
to irradiation and subsequent annealing at room temperature and higher temperatures to …
Evaluation of Radiation Sensor Aspects of MOS Capacitors under Zero Gate Bias
The aim of the present study is to investigate the usage of Erbium Oxide (Er 2 O 3) as a gate
dielectric in MOS-based radiation sensors. Er 2 O 3 thin films were deposited on a p-type Si …
dielectric in MOS-based radiation sensors. Er 2 O 3 thin films were deposited on a p-type Si …
P-channel MOSFET as a sensor and dosimeter of ionizing radiation
MM Pejovic - Facta Universitatis, Series: Electronics and …, 2016 - casopisi.junis.ni.ac.rs
This paper presented a study of MOSFETs as a sensor and dosimeter of ionizing radiation.
The electrical signal used as a dosimetric parameter is the threshold voltage. The …
The electrical signal used as a dosimetric parameter is the threshold voltage. The …
Response to ionizing radiation of different biased and stacked pMOS structures
Different low-cost commercial general-purpose MOSFETs and a RADFET are subjected to
ionizing photon beams for comparison. The main characteristics of the radiation response …
ionizing photon beams for comparison. The main characteristics of the radiation response …
A compact dosimetric system for MOSFETs based on passive NFC tag and smartphone
In this work we describe and evaluate a dosimetric system based on an NFC (Near Field
Communication) tag and a smartphone that uses commercial MOSFETs as radiation …
Communication) tag and a smartphone that uses commercial MOSFETs as radiation …
Dose verification system based on MOS transistor for real-time measurement
This work presents a dosimetry system based on MOSFET sensors for real-time dose
monitoring. MOS transistors were biased during irradiation, and the response of lateral …
monitoring. MOS transistors were biased during irradiation, and the response of lateral …
Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift
MM Pejović - Radiation Physics and Chemistry, 2017 - Elsevier
The behavior of radiation-induced fixed oxide traps and radiation-induced switching traps
near and at Si/SiO 2 interface during gamma-ray irradiation up to 50 Gy and post-irradiation …
near and at Si/SiO 2 interface during gamma-ray irradiation up to 50 Gy and post-irradiation …
[HTML][HTML] Effect of gamma ray absorbed dose on the FET transistor parameters
This article tries to explain a modified method on dosimetry, based on electronic solid state
including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose …
including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose …
Comparative study of MOSFET response to photon and electron beams in reference conditions
A comparative study of radiation-sensitive field effect transistors (RADFETs) response to
photon and electron beams has been carried out in reference conditions. Both types of …
photon and electron beams has been carried out in reference conditions. Both types of …
Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation
The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to 60 Co
radiation under switched-bias conditions is studied by real time monitoring the threshold …
radiation under switched-bias conditions is studied by real time monitoring the threshold …