MOCVD Growth of InN Thin Films at Different Temperatures Using Pulsed Trimethylindium Approach
The growth of indium nitride (InN) thin films via metalorganic chemical vapor deposition
(MOCVD) is often hindered by nitrogen deficiency at lower growth temperatures. To address …
(MOCVD) is often hindered by nitrogen deficiency at lower growth temperatures. To address …
[HTML][HTML] Luminescence efficiency and temperature quenching of spontaneous and stimulated emission in ultra-low dislocation density InN
In this letter, we evaluate temperature quenching of photoluminescence in ultra-high quality
epitaxial InN films to assess the internal quantum efficiency (IQE) of band-to-band light …
epitaxial InN films to assess the internal quantum efficiency (IQE) of band-to-band light …
Tailoring hot carrier cooling and recombination dynamics of mixed halide perovskite by incorporating Au@ CZTS core–shell nanocrystal
Organic–inorganic halide perovskite has emerged as the front-runner of absorber materials
for highly efficient solar cell in recent years. The incorporation of metallic (Au, Ag) …
for highly efficient solar cell in recent years. The incorporation of metallic (Au, Ag) …
Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing
KE Kudryavtsev, DN Lobanov… - ECS Journal of Solid …, 2022 - iopscience.iop.org
Near-infrared stimulated emission (SE) from InGaN layers grown by plasma-assisted
molecular beam epitaxy has been studied, and the influence of the growth temperature (T …
molecular beam epitaxy has been studied, and the influence of the growth temperature (T …
Ultrafast laser-induced plasma anisotropy in pristine and surface pre-structured zinc telluride, probed by terahertz pulses
We use THz probe pulses to detect and analyze the dynamics of charge transport
anisotropies generated by ultrafast laser two-photon absorption in Zinc Telluride (ZnTe) …
anisotropies generated by ultrafast laser two-photon absorption in Zinc Telluride (ZnTe) …
Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers
KE Kudryavtsev, BA Andreev, DN Lobanov… - Journal of Applied …, 2023 - pubs.aip.org
Interband recombination in bulk indium-rich InGaN is studied via both spontaneous and
stimulated emissions. Based on the low-temperature luminescence and absorption data, the …
stimulated emissions. Based on the low-temperature luminescence and absorption data, the …
Kinetically stabilized high-temperature InN growth
We report on indium nitride growth on sapphire substrates by migration-enhanced plasma-
assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in …
assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in …
Extreme radiation resistance in InN
Carrier dynamics were studied in InN, which is a promising material for radiation-resistant
optoelectronic devices. InN epilayers with different background electron densities were …
optoelectronic devices. InN epilayers with different background electron densities were …
Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs
Pulsed growth, ie the MOCVD growth method, when the metal precursors are delivered with
interruptions, allows increasing the internal quantum efficiency (IQE) of InGaN multiple …
interruptions, allows increasing the internal quantum efficiency (IQE) of InGaN multiple …
Vacuum Deposition, Characterization and Property Engineering of Cu2BaGe1-xSnxSe4 Films and Their PV Applications
Y Kim - 2023 - search.proquest.com
Abstract Kesterite Cu 2 ZnSnS 4-x Sex (CZTSSe) has once gained wide attention as a
potential alternative to the CdTe and Cu (In, Ga)(S, Se) 2 (CIGSSe) photovoltaic (PV) …
potential alternative to the CdTe and Cu (In, Ga)(S, Se) 2 (CIGSSe) photovoltaic (PV) …