III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
Nanowire photodetectors based on wurtzite semiconductor heterostructures
Using nanowires for photodetection constitutes an opportunity to enhance the absorption
efficiency while reducing the electrical cross-section of the device. Nanowires present …
efficiency while reducing the electrical cross-section of the device. Nanowires present …
Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances
Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging,
environmental monitoring and air and water sterilization, as well as flame sensing and early …
environmental monitoring and air and water sterilization, as well as flame sensing and early …
Room-temperature photodetection dynamics of single GaN nanowires
We report on the photocurrent behavior of single GaN n–i–n nanowires (NWs) grown by
plasma-assisted molecular-beam epitaxy on Si (111). These structures present a …
plasma-assisted molecular-beam epitaxy on Si (111). These structures present a …
The nanorod approach: GaN NanoLEDs for solid state lighting
A Waag, X Wang, S Fündling, J Ledig… - … status solidi c, 2011 - Wiley Online Library
Vertically aligned GaN nanorods have recently obtained substantial interest as a new
approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs …
approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs …
Direct experimental determination of the spontaneous polarization of GaN
We present a universal approach for determining the spontaneous polarization P sp of a
wurtzite semiconductor from the emission energies of excitons bound to the different types of …
wurtzite semiconductor from the emission energies of excitons bound to the different types of …
Surface-induced effects in GaN nanowires
Semiconductor nanowires (NWs) are characterized by an extraordinarily large surface-to-
volume ratio. Consequently, surface effects are expected to play a much larger role than in …
volume ratio. Consequently, surface effects are expected to play a much larger role than in …
New UV‐A photodetector based on individual potassium niobate nanowires with high performance
A new UV‐A photodetector based on K2Nb8O21 nanowire is successfully fabricated for the
first time. The potassium niobate is synthesized using a facile molten method. The …
first time. The potassium niobate is synthesized using a facile molten method. The …
Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state
Surface states have been a longstanding and sometimes underestimated problem in gallium
nitride (GaN) based devices. The instability caused by surface-charge-trap** in GaN …
nitride (GaN) based devices. The instability caused by surface-charge-trap** in GaN …
Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors
GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and
aberration-corrected scanning transmission electron microscopy (STEM) characterization on …
aberration-corrected scanning transmission electron microscopy (STEM) characterization on …