Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond

M Kim, JH Seo, U Singisetti, Z Ma - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

Z Wang, G Wang, X Liu, S Wang, T Wang… - Journal of Materials …, 2021 - pubs.rsc.org
Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new-generation
wide band gap semiconductor materials, have become a hot spot in the semiconductor field …

Heterogeneously integrated optoelectronic devices enabled by micro‐transfer printing

J Yoon, SM Lee, D Kang, MA Meitl… - Advanced Optical …, 2015 - Wiley Online Library
Transfer printing is a materials assembly technique that uses elastomeric stamps for
heterogeneous integration of various classes of micro‐and nanostructured materials into two …

Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example

C Zhang, SH Park, D Chen, DW Lin, W **ong… - ACS …, 2015 - ACS Publications
A porous medium is a special type of material where voids are created in a solid medium.
The introduction of pores into a bulk solid can profoundly affect its physical properties and …

Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

S Wang, L Zhang, C Sun, Y Shao, Y Wu… - … (Deerfield Beach, Fla.), 2016 - europepmc.org
A type of single-crystal gallium nitride mesoporous membrane is fabricated and its
supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit …

High performance flexible visible-blind ultraviolet photodetectors with two-dimensional electron gas based on unconventional release strategy

YY Zhang, YX Zheng, JY Lai, JH Seo, KH Lee… - ACS …, 2021 - ACS Publications
Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at
the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs …

Recent advances in flexible inorganic light emitting diodes: From materials design to integrated optoelectronic platforms

H Zhang, JA Rogers - Advanced Optical Materials, 2019 - Wiley Online Library
The emergence of high‐performance materials for flexible inorganic light emitting diodes
(ILEDs) provides the foundations for a broad range of compelling, unconventional systems …

Epitaxial lift-off of flexible GaN-based HEMT arrays with performances optimization by the piezotronic effect

X Chen, J Dong, C He, L He, Z Chen, S Li, K Zhang… - Nano-Micro Letters, 2021 - Springer
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio
frequency and wireless communication. However, to unlock the full potential of HEMTs, the …

Assembly and Self‐Assembly of Nanomembrane Materials—From 2D to 3D

G Huang, Y Mei - Small, 2018 - Wiley Online Library
Nanoscience and nanotechnology offer great opportunities and challenges in both
fundamental research and practical applications, which require precise control of building …

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

J Gong, J Zhou, P Wang, TH Kim, K Lu… - Advanced Electronic …, 2023 - Wiley Online Library
Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …