Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or
gallium vacancy (VN or VGa) are reviewed. The VN‐containing defects, including the …

Experimental studies of Be-doped GaN by photoluminescence (PL) confirmed theoretical
predictions that the Be Ga acceptor in GaN has dual nature, namely a coexistence of a deep …

GaN samples are implanted with Be and F and annealed in different conditions to activate
the BeGa acceptors. Photoluminescence spectra are studied to recognize the defects. The …

The Ca Ga acceptor in GaN was studied using photoluminescence (PL) experiments and
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …

The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …

Europium do** of gallium nitride using a novel ultra-high pressure annealing method was
investigated. Ammonothermal gallium nitride substrates (n-type) were used as europium ion …

Defects create key functionalities in semiconductor devices by contributing with charge
carriers or assisting optical transitions. On the other hand, defects may cause severe …

Despite recent advances in growth and characterization of GaN: Be, reliable conductive p‐
type GaN: Be remains elusive. In this work, GaN is co‐doped with Be and Mg to improve the …

This work presents the diffusion mechanism of zinc in gallium nitride. Halide vapor phase
epitaxy layers were deposited on native ammonothermal seeds of three crystallographic …

The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …