This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently
improved greatly with regard to their memory performances. The formation and rupture of …

Resistive switching memories based on the valence change mechanism have attracted
great attention due to their potential use in future nanoelectronics. The working principle …

This paper addresses the two main resistive switching (RS) memory technologies: phase-
change memory (PCM) and redox-based resistive random access memory (ReRAM). It will …

A key requirement for using memristors in circuits is a predictive model for device behavior
that can be used in simulations and to guide designs. We analyze one of the most promising …

This article presents a review of physical, analytical, and compact models for oxide‐based
RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect …

Resistive switching memory that uses halide perovskites (HP) has been considered as next-
generation storage devices due to low operation voltage and high on/off ratio. However, the …

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied
using in-operando x-ray absorption spectromicroscopy and is used to microphysically …

We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists
of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and …

To facilitate the development of memristive devices, it is essential to resolve the problem of
non‐uniformity in switching, which is caused by the random nature of the filamentary …