Forthcoming low-energy consumption oxide electronics rely on the deterministic control of
ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the …

The combination of epitaxial strain and defect engineering facilitates the tuning of the
transition temperature of BaTiO3 to> 800° C. Advances in thin-film deposition enable the …

Although BaTiO3 is one of the most famous lead-free piezomaterials, it suffers from small
spontaneous and low Curie temperature. Chemical pressure, as a mild way to modulate the …

The current burst of device concepts based on nanoscale domain-control in magnetically
and electrically ordered systems motivates us to review the recent development in the …

The success of oxide electronics depends on the ability to design functional properties such
as ferroelectricity with atomic accuracy. However, despite tremendous advances in …

We identify a transient enhancement of the depolarizing field, leading to an unexpected
quench of net polarization, during the growth of a prototypical metal-ferroelectric-metal …

Although epitaxial strain imparted by lattice mismatch between a film and the underlying
substrate has led to distinct structures and emergent functionalities, the discrete lattice …

Ferroelectric BaTiO3 films with large polarization have been integrated with Si (001) by
pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate …

In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition
temperature can lie above the growth temperature. Ferroelectric polarization and domains …

The integration of BaTiO3 with Si (100) is essential to exploit its ferroelectric capabilities in
the well-established Si-complementary metal–oxide–semiconductor (CMOS) technological …