40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …

Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN
HEMTs fabricated via two different process methods. Both positive and negative threshold …

Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …

Donor-like defects are activated and acceptor-like defects are passivated when commercial
AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or …

Current–voltage characteristics and low-frequency (LF) noise of industrial-quality
AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a …