Review of semiconductor flash memory devices for material and process issues
Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …
modern handheld electronic devices, widening its share even in the data centers where …
Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks
Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial
intelligence applications due to their ability to extract features from unstructured data and …
intelligence applications due to their ability to extract features from unstructured data and …
The role of polymers in halide perovskite resistive switching devices
Currently, halide perovskites (HPs) are gaining traction in multiple applications, such as
photovoltaics and resistive switching (RS) devices. In RS devices, the high electrical …
photovoltaics and resistive switching (RS) devices. In RS devices, the high electrical …
Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications
Hafnia-based ferroelectric thin-film transistors (FeTFTs) are regarded as promising
candidates for future nonvolatile memory devices owing to their low power consumption …
candidates for future nonvolatile memory devices owing to their low power consumption …
Low power consumption nanofilamentary ECM and VCM cells in a single sidewall of high‐density VRRAM arrays
MC Wu, YH Ting, JY Chen, WW Wu - Advanced Science, 2019 - Wiley Online Library
The technologies of 3D vertical architecture have made a major breakthrough in
establishing high‐density memory structures. Combined with an array structure, a 3D high …
establishing high‐density memory structures. Combined with an array structure, a 3D high …
3-D stacked synapse array based on charge-trap flash memory for implementation of deep neural networks
YJ Park, HT Kwon, B Kim, WJ Lee… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper proposes a synaptic device based on charge-trap flash memory that has good
CMOS compatibility and superior reliability characteristics compared with other synaptic …
CMOS compatibility and superior reliability characteristics compared with other synaptic …
3-D synapse array architecture based on charge-trap flash memory for neuromorphic application
In order to address a fundamental bottleneck of conventional digital computers, there is
recently a tremendous upsurge of investigations on hardware-based neuromorphic systems …
recently a tremendous upsurge of investigations on hardware-based neuromorphic systems …
Ferroelectric polarization aided low voltage operation of 3D NAND flash memories
In this paper, we proposed a novel structure enabling the low voltage operation of three-
dimensional (3D) NAND flash memory. The proposed structure has a ferroelectric thin film …
dimensional (3D) NAND flash memory. The proposed structure has a ferroelectric thin film …
Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology
Ferroelectric transistors are considered promising for next-generation 3D NAND technology
due to their lower power consumption and faster operation compared to conventional …
due to their lower power consumption and faster operation compared to conventional …
A new read scheme for alleviating cell-to-cell interference in scaled-down 3D NAND flash memory
In this paper, we investigated the cell-to-cell interference in scaled-down 3D NAND flash
memory by using a Technology Computer-Aided Design (TCAD) simulation. The …
memory by using a Technology Computer-Aided Design (TCAD) simulation. The …