The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

T Knobloch, YY Illarionov, F Ducry, C Schleich… - Nature …, 2021 - nature.com
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

Carbon-based electronics

P Avouris, Z Chen, V Perebeinos - Nature nanotechnology, 2007 - nature.com
The semiconductor industry has been able to improve the performance of electronic systems
for more than four decades by making ever-smaller devices. However, this approach will …

[HTML][HTML] Mobility overestimation due to gated contacts in organic field-effect transistors

EG Bittle, JI Basham, TN Jackson, OD Jurchescu… - Nature …, 2016 - nature.com
Parameters used to describe the electrical properties of organic field-effect transistors, such
as mobility and threshold voltage, are commonly extracted from measured current–voltage …

High Performance Multilayer MoS2 Transistors with Scandium Contacts

S Das, HY Chen, AV Penumatcha, J Appenzeller - Nano letters, 2013 - ACS Publications
While there has been growing interest in two-dimensional (2-D) crystals other than
graphene, evaluating their potential usefulness for electronic applications is still in its infancy …

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

JP Llinas, A Fairbrother, G Borin Barin, W Shi… - Nature …, 2017 - nature.com
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures
have promising electronic properties for high-performance field-effect transistors and ultra …

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature

F **a, DB Farmer, Y Lin, P Avouris - Nano letters, 2010 - ACS Publications
Graphene is considered to be a promising candidate for future nanoelectronics due to its
exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) …

Physics of electron emission and injection in two‐dimensional materials: theory and simulation

YS Ang, L Cao, LK Ang - InfoMat, 2021 - Wiley Online Library
Electrically contacting two‐dimensional (2D) materials is an inevitable process in the
fabrication of devices for both the study of fundamental nanoscale charge transport physics …

Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials

D Kufer, G Konstantatos - Acs Photonics, 2016 - ACS Publications
The large diversity of applications in our daily lives that rely on photodetection technology
requires photodetectors with distinct properties. The choice of an adequate photodetecting …

Electronic and transport properties of nanotubes

JC Charlier, X Blase, S Roche - Reviews of modern physics, 2007 - APS
This article reviews the electronic and transport properties of carbon nanotubes. The focus is
mainly theoretical, but when appropriate the relation with experimental results is mentioned …

Electrical contacts to one-and two-dimensional nanomaterials

F Léonard, AA Talin - Nature nanotechnology, 2011 - nature.com
Existing models of electrical contacts are often inapplicable at the nanoscale because there
are significant differences between nanostructures and bulk materials arising from unique …