The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …
limits place extreme demands on the properties of all materials involved. The requirements …
Carbon-based electronics
The semiconductor industry has been able to improve the performance of electronic systems
for more than four decades by making ever-smaller devices. However, this approach will …
for more than four decades by making ever-smaller devices. However, this approach will …
[HTML][HTML] Mobility overestimation due to gated contacts in organic field-effect transistors
Parameters used to describe the electrical properties of organic field-effect transistors, such
as mobility and threshold voltage, are commonly extracted from measured current–voltage …
as mobility and threshold voltage, are commonly extracted from measured current–voltage …
High Performance Multilayer MoS2 Transistors with Scandium Contacts
While there has been growing interest in two-dimensional (2-D) crystals other than
graphene, evaluating their potential usefulness for electronic applications is still in its infancy …
graphene, evaluating their potential usefulness for electronic applications is still in its infancy …
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures
have promising electronic properties for high-performance field-effect transistors and ultra …
have promising electronic properties for high-performance field-effect transistors and ultra …
Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature
Graphene is considered to be a promising candidate for future nanoelectronics due to its
exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) …
exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) …
Physics of electron emission and injection in two‐dimensional materials: theory and simulation
Electrically contacting two‐dimensional (2D) materials is an inevitable process in the
fabrication of devices for both the study of fundamental nanoscale charge transport physics …
fabrication of devices for both the study of fundamental nanoscale charge transport physics …
Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials
D Kufer, G Konstantatos - Acs Photonics, 2016 - ACS Publications
The large diversity of applications in our daily lives that rely on photodetection technology
requires photodetectors with distinct properties. The choice of an adequate photodetecting …
requires photodetectors with distinct properties. The choice of an adequate photodetecting …
Electronic and transport properties of nanotubes
This article reviews the electronic and transport properties of carbon nanotubes. The focus is
mainly theoretical, but when appropriate the relation with experimental results is mentioned …
mainly theoretical, but when appropriate the relation with experimental results is mentioned …
Electrical contacts to one-and two-dimensional nanomaterials
Existing models of electrical contacts are often inapplicable at the nanoscale because there
are significant differences between nanostructures and bulk materials arising from unique …
are significant differences between nanostructures and bulk materials arising from unique …