Composition dependent properties of p-and n-type polycrystalline group-IV alloy thin films
Group-IV alloy semiconductors have garnered increasing attention as advanced thin-film
materials for next-generation electronics. We have demonstrated polycrystalline Ge thin …
materials for next-generation electronics. We have demonstrated polycrystalline Ge thin …
High-hole mobility Si1-xGex (0.1≤ x≤ 1) on an insulator formed by advanced solid-phase crystallization
D Takahara, R Yoshimine, T Suemasu… - Journal of alloys and …, 2018 - Elsevier
The grain size and hole mobility of polycrystalline Si 1-x Ge x thin films formed on glass by
solid-phase crystallization were significantly improved after preparing the amorphous …
solid-phase crystallization were significantly improved after preparing the amorphous …
Fabrication and characterization of Yb/MoO3/(C, Yb) devices
SE Al Garni, AF Qasrawi - Current Applied Physics, 2019 - Elsevier
In this study we have explored some of the properties of Yb/MoO 3/(C, Yb) thin films as a
multifunctional optoelectronic device. While the MoO 3 films which are deposited onto glass …
multifunctional optoelectronic device. While the MoO 3 films which are deposited onto glass …