The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have
garnered significant interest in circuit applications. Researchers have developed circuits …

Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Complementary field-effect transistors—which have n-type and p-type field-effect transistors
(FETs) vertically stacked on top of each other—can boost area efficiency in integrated …

The miniaturization of silicon-based electronics has motivated considerable efforts in
exploring new electronic materials, including two-dimensional semiconductors and halide …

Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …

Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is
an important step toward evaluating the application space of TMD materials. Although some …

As the Si-based transistors scale down to atomic dimensions, the basic principle of current
electronics, which heavily relies on the tunable charge degree of freedom, faces increasing …

Recently, research on two-dimensional (2D) semiconductors has begun to translate from the
fundamental investigation into rudimentary functional circuits. In this work, we unveil the first …

Neuromorphic system based on artificial synaptic devices is considered as a potential
candidate to realize the in‐memory computing and parallel processing of data for …