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Electron trap** effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Schottky diode temperature sensor for pressure sensor
M Basov - Sensors and Actuators A: Physical, 2021 - Elsevier
The small silicon chip of Schottky diode (0.8× 0.8× 0.4 mm 3) with planar arrangement of
electrodes (chip PSD) as temperature sensor, which functions under the operating …
electrodes (chip PSD) as temperature sensor, which functions under the operating …
Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red
Z Ahmad, MH Sayyad - Physica E: Low-dimensional Systems and …, 2009 - Elsevier
The current–voltage (I–V) characteristics of Al/methyl-red/Ag surface-type structure were
investigated in air at room temperature. The conventional forward bias I–V method, Cheung …
investigated in air at room temperature. The conventional forward bias I–V method, Cheung …
The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics
The temperature dependence of the current–voltage (I–V) characteristics of Au/SiO2/n-Si
(MIS) Schottky diodes has been measured in the temperature range of 300–400K. Based on …
(MIS) Schottky diodes has been measured in the temperature range of 300–400K. Based on …
Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
The current-voltage (IV) characteristics of Ni/4 Hn SiC Schottky diodes have been measured
in the temperature range of 180–300 K with a temperature step of 20 K. An experimental …
in the temperature range of 180–300 K with a temperature step of 20 K. An experimental …
Electrical characterization of Al/fluorescein sodium salt organic semiconductor/Au diode by current-voltage and capacitance-voltage methods
M Ilhan - Journal of materials and electronic devices, 2015 - dergi-fytronix.com
The organic Schottky diode of fluorescein sodium salt using aluminium and gold metals
were fabricated. Electronic and interface state properties of the Al/p-FSS Schottky diode …
were fabricated. Electronic and interface state properties of the Al/p-FSS Schottky diode …
Rejuvenation of degraded Zener diodes with the electron wind force
In this study, we explore the rejuvenation of a Zener diode degraded by high electrical
stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee …
stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee …
Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes
A Tataroğlu - Chinese Physics B, 2013 - iopscience.iop.org
In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si 3 N 4/n-Si (MIS) Schottky
diodes are obtained from the forward bias current—voltage (I—V) and capacitance—voltage …
diodes are obtained from the forward bias current—voltage (I—V) and capacitance—voltage …
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
F Yigiterol, HH Güllü, Ö Bayraklı, DE Yıldız - Journal of Electronic Materials, 2018 - Springer
Electrical characteristics of the Au/Si 3 N 4/4H n-SiC metal–insulator-semiconductor (MIS)
diode were investigated under the temperature, TT, interval of 160–400 K using current …
diode were investigated under the temperature, TT, interval of 160–400 K using current …
Realization of diode structures on paper: An example of papertronics
A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In pn
junction diode structures has been demonstrated here. Ag (∼ 5 μm), CdTe (∼ 50 μm), CdS …
junction diode structures has been demonstrated here. Ag (∼ 5 μm), CdTe (∼ 50 μm), CdS …