Phonon-mediated superconductivity in the metal-bonded perovskite up to 54 K under ambient pressure
Multihydrogen lanthanum hydrides have shown the highest critical temperature T c at 250–
260 K under pressures of 170–200 GPa. However, such high pressure is a great challenge …
260 K under pressures of 170–200 GPa. However, such high pressure is a great challenge …
Monolayer‐thick GaN/AlN multilayer heterostructures for deep‐ultraviolet optoelectronics
Recent progress in the development of monolayer (ML)‐thick GaN/AlN multilayer
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy
Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
Effect of inhomogeneous broadening in ultraviolet III-nitride light-emitting diodes
In the past years, light-emitting diodes (LED) made of GaN and its related ternary
compounds with indium and aluminium have become an enabling technology in all areas of …
compounds with indium and aluminium have become an enabling technology in all areas of …
Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers
The paper reports on elaboration of plasma‐assisted molecular beam epitaxy (MBE) of
AlxGa1− xN‐based quantum‐well (QW) structures with high Al content (up to 50% in the …
AlxGa1− xN‐based quantum‐well (QW) structures with high Al content (up to 50% in the …
High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular …
We report the internal structures and emission properties of GaN/AlN single-and multiple-
quantum-well (QW) heterostructures with well widths of dw= 1–4 monolayers (MLs), grown …
quantum-well (QW) heterostructures with well widths of dw= 1–4 monolayers (MLs), grown …
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on …
VN Jmerik, AM Mizerov, AA Sitnikova… - Applied Physics …, 2010 - pubs.aip.org
We report on AlGaN multiple-quantum-well separate confinement laser heterostructures
grown by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low …
grown by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low …
Simulation of carrier injection efficiency in AlGaN-based uv-light-emitting diodes
Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light
emitting diodes (UV-LED) are performed in order to understand injection efficiency for light …
emitting diodes (UV-LED) are performed in order to understand injection efficiency for light …
Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3
This paper reports on novel approaches developed for plasma-assisted molecular beam
epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which …
epitaxy of Al-rich AlGaN epilayers and quantum well heterostructures on c-sapphire, which …
Monolayer-scale gan/aln multiple quantum wells for high power e-beam pumped uv-emitters in the 240–270 nm spectral range
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-
pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma …
pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma …