Ferrimagnets composed of multiple and antiferromagnetically coupled magnetic elements
have attracted much attention recently as a material platform for spintronics. They offer the …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

The discovery of spin-transfer torque (STT) enabled the control of the magnetization
direction in magnetic devices in nanoseconds using an electrical current. Ultrashort optical …

The manipulation of fast domain wall motion in magnetic nanostructures could form the
basis of novel magnetic memory and logic devices. However, current approaches for …

Since it was recently demonstrated in a spin-valve structure, magnetization reversal of a
ferromagnetic layer using a single ultrashort optical pulse has attracted attention for future …

New methods to induce magnetization switching in a thin ferromagnetic material using
femtosecond laser pulses without the assistance of an applied external magnetic field have …

Perpendicular magnetic tunnel junctions (p-MTJs), as building blocks of spintronic devices,
offer substantial potential for next-generation nonvolatile memory applications. However …

Recent works have shown that the magnetization of Tb/Co multilayers can be switched all-
optically by a single ultrashort laser pulse. Surprisingly, the same process cannot be …

We introduce a hybrid plasmonic-photonic device for on-chip all-optical switching and
reading of ferrimagnet bits with perpendicular magnetic anisotropy in a racetrack spintronic …

Magnetic memory combining plasmonics and magnetism is poised to dramatically increase
the bit density and energy efficiency of light-assisted ultrafast magnetic storage, thanks to …