Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

The emergence of data-centric applications such as artificial intelligence (AI), machine
learning, and the Internet of Things (IoT), has promoted surges in demand for storage …

How and why the reliability of ferroelectric HfO2‐and HZO (Hf0. 5Zr0. 5O2)‐based memory
devices strongly depends on the choice of electrode materials is currently under intense …

Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …

HfO2-based ferroelectric thin films are promising in both memory and logic devices owing to
their compatibility with complementary metal-oxide-semiconductor platforms and excellent …

Miniaturized energy storage devices, such as electrostatic nanocapacitors and
electrochemical micro-supercapacitors (MSCs), are important components in on-chip energy …

HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …

The well‐developed high‐k technologies ease the integration complexity for HfO2‐based
ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes …

Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile
memory devices. Several strategies have demonstrated to be of interest to improve its …

Since the discovery of ferroelectric switching in hafnium-based thin films, this family of
materials has garnered significant attention. However, their higher coercive field not only …