Materials processing by gas cluster ion beams

I Yamada, J Matsuo, N Toyoda, A Kirkpatrick - Materials Science and …, 2001 - Elsevier
This paper discusses the principles and experimental status of gas cluster ion beam (GCIB)
processing as a promising surface modification technique for practical industrial …

The physics and applications of ion beam erosion

G Carter - Journal of Physics D: Applied Physics, 2001 - iopscience.iop.org
Energetic ion bombardment of solid targets can lead to the production of atomic recoils and
defects within the solid and the ejection or sputtering of atoms from the surface with the …

Morphology of ion-sputtered surfaces

MA Makeev, R Cuerno, AL Barabasi - … in Physics Research Section B: Beam …, 2002 - Elsevier
We derive a stochastic nonlinear continuum equation to describe the morphological
evolution of amorphous surfaces eroded by ion bombardment. Starting from Sigmund's …

Making waves: kinetic processes controlling surface evolution during low energy ion sputtering

WL Chan, E Chason - Journal of applied physics, 2007 - pubs.aip.org
When collimated beams of low energy ions are used to bombard materials, the surface often
develops a periodic pattern or “ripple” structure. Different types of patterns are observed to …

Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

S Ninomiya, K Ichiki, H Yamada… - … Journal Devoted to …, 2009 - Wiley Online Library
We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion
beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents …

[किताब][B] Low-energy ion irradiation of solid surfaces

H Gnaser, H Gnaser - 1999 - Springer
The book presents an overview on important aspects of ion irradiation of surfaces,
emphasizing low impact energies. Specifically, ion penetration and implantation into solids …

Fundamentals of focused ion beam nanostructural processing: Below, at, and above the surface

WJ MoberlyChan, DP Adams, MJ Aziz, G Hobler… - MRS bulletin, 2007 - cambridge.org
This article considers the fundamentals of what happens in a solid when it is impacted by a
medium-energy gallium ion. The study of the ion/sample interaction at the nanometer scale …

Ultra shallow do** profiling with SIMS

PC Zalm - Reports on Progress in Physics, 1995 - iopscience.iop.org
An overview is given of the possibilities and limitations of secondary ion mass spectrometry
as an analytical tool in the investigation of near-perfect, ie almost atomically sharp, dopant …

Influence of O+2 energy, flux, and fluence on the formation and growth of sputtering‐induced ripple topography on silicon

JJ Vajo, RE Doty, EH Cirlin - Journal of Vacuum Science & Technology …, 1996 - pubs.aip.org
The formation of ripples on Si (100) by O+ 2 sputtering at an angle of incidence of 40° and
energies from 1 to 9 keV has been studied using secondary ion mass spectrometry and …