Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Oxide semiconductor thin‐film transistors: a review of recent advances
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …
applications. The key components are wide bandgap semiconductors, where oxides of …
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
The present article is a review of the recent progress and major trends in the field of thin-film
transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First …
transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First …
The 2016 oxide electronic materials and oxide interfaces roadmap
Oxide electronic materials provide a plethora of possible applications and offer ample
opportunity for scientists to probe into some of the exciting and intriguing phenomena …
opportunity for scientists to probe into some of the exciting and intriguing phenomena …
Solution-processable metal oxide semiconductors for thin-film transistor applications
Solution-processable metal oxide semiconductors for thin-film transistor applications -
Chemical Society Reviews (RSC Publishing) DOI:10.1039/C3CS35402D Royal Society of …
Chemical Society Reviews (RSC Publishing) DOI:10.1039/C3CS35402D Royal Society of …
Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Low-temperature, high-performance, solution-processed indium oxide thin-film transistors
Solution-processed In2O3 thin-film transistors (TFTs) were fabricated by a spin-coating
process using a metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform …
process using a metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform …
Instabilities in amorphous oxide semiconductor thin-film transistors
JF Conley - IEEE Transactions on Device and materials …, 2010 - ieeexplore.ieee.org
Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System
CA Hoel, TO Mason, JF Gaillard… - Chemistry of …, 2010 - ACS Publications
Zinc-indium-tin oxide (ZITO) is a potential replacement for the currently used tin-doped
indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At …
indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At …
Overview of electroceramic materials for oxide semiconductor thin film transistors
The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers
for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150° C …
for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150° C …