[HTML][HTML] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov… - Nanoscale, 2015 - pubs.rsc.org
We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …

High frequency electric field induced nonlinear effects in graphene

MM Glazov, SD Ganichev - Physics Reports, 2014 - Elsevier
The nonlinear optical and optoelectronic properties of graphene with the emphasis on the
processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects …

Standardization of surface potential measurements of graphene domains

V Panchal, R Pearce, R Yakimova, A Tzalenchuk… - Scientific reports, 2013 - nature.com
We compare the three most commonly used scanning probe techniques to obtain a reliable
value of the work function in graphene domains of different thickness. The surface potential …

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

M Kruskopf, DM Pakdehi, K Pierz, S Wundrack… - 2D …, 2016 - iopscience.iop.org
We present a new fabrication method for epitaxial graphene on SiC which enables the
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R Ribeiro-Palau, F Lafont, J Brun-Picard… - Nature …, 2015 - nature.com
The quantum Hall effect provides a universal standard for electrical resistance that is
theoretically based on only the Planck constant h and the electron charge e. Currently, this …

Single-particle tunneling in doped graphene-insulator-graphene junctions

RM Feenstra, D Jena, G Gu - Journal of Applied Physics, 2012 - pubs.aip.org
The characteristics of tunnel junctions formed between n-and p-doped graphene are
investigated theoretically. The single-particle tunnel current that flows between the two …

Quantum Hall phase in graphene engineered by interfacial charge coupling

Y Wang, X Gao, K Yang, P Gu, X Lu, S Zhang… - Nature …, 2022 - nature.com
The quantum Hall effect can be substantially affected by interfacial coupling between the
host two-dimensional electron gases and the substrate, and has been predicted to give rise …

Anomalously strong pinning of the filling factor in epitaxial graphene

T Janssen, A Tzalenchuk, R Yakimova, S Kubatkin… - Physical Review B …, 2011 - APS
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-
terminated SiC. Uniquely to this system, the dominance of quantum over classical …

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F Lafont, R Ribeiro-Palau, D Kazazis, A Michon… - Nature …, 2015 - nature.com
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards
(QHRS), accurate to within 10− 9 in relative value, but operating at lower magnetic fields …

Carrier transport mechanism in graphene on SiC (0001)

S Tanabe, Y Sekine, H Kageshima, M Nagase… - Physical Review B …, 2011 - APS
Carrier density and temperature-dependent transport properties of monolayer graphene
grown on SiC (0001) were systematically studied. With increasing temperature, resistivity at …