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Monolithically integrated gan gate drivers–a design guide
In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …
the lateral structure of the GaN technology. A key improvement over a discrete …
Monolithic GaN-based driver and GaN switch with diode-emulated GaN technique for 50-MHz operation and sub-0.2-ns deadtime control
TW Wang, YY Kao, SH Hung, YH Wen… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
In this article, the proposed monolithic gallium nitride (GaN)-based driver uses the diode-
emulated technique to reduce reverse conduction through a meta-stable fast (MSF) …
emulated technique to reduce reverse conduction through a meta-stable fast (MSF) …
[HTML][HTML] GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …
A 400 v dual-phase series-capacitor buck converter gan ic with integrated closed-loop control
SK Murray, A Kachura… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) offer a 13× better figure-of-
merit than silicon laterally-diffused metal-oxide semiconductor (LDMOS) devices for power …
merit than silicon laterally-diffused metal-oxide semiconductor (LDMOS) devices for power …
A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dVS/dt Noise Immunity Enhancement Structure
Y Zheng, B Li, Q Dong, Y Ying, D Song… - … Transactions on Very …, 2023 - ieeexplore.ieee.org
Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully
unlock the high-speed capabilities of GaN devices by integrating drive circuits and power …
unlock the high-speed capabilities of GaN devices by integrating drive circuits and power …
An integrated GaN overcurrent protection circuit for power HEMTs using SenseHEMT
GaN power high-electron-mobility transistors (HEMTs), with their fast switching transients
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters
R Lai, Z Zhou, J Wu, Y Dai, X Liu… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This article presents a monolithic gallium nitride (GaN) power stage as a potential solution
for high-frequency power conversion. The power stage incorporates fully integrated GaN …
for high-frequency power conversion. The power stage incorporates fully integrated GaN …
31.10 A fully integrated 500V, 6.25 MHz GaN-IC for totem-pole PFC off-line power conversion
N Deneke, B Wicht - 2024 IEEE International Solid-State …, 2024 - ieeexplore.ieee.org
Grid-powered devices such as desktop computers, displays and TVs, industrial power
supplies, and 5G infrastructure are experiencing an increasing demand for higher power …
supplies, and 5G infrastructure are experiencing an increasing demand for higher power …
Overshoot prevention in monolithic GaN by ultra-low ESL gate loop design using chip-scale capacitors and gate driver pull-up path tuning technique
N Deneke, B Wicht - 2024 IEEE Applied Power Electronics …, 2024 - ieeexplore.ieee.org
Despite monolithic integration of GaN gate drivers with the power stage, some parasitic gate
loop inductance remains, including connections to off-chip decoupling capacitors. On-chip …
loop inductance remains, including connections to off-chip decoupling capacitors. On-chip …
Monolithically integrated GaN power stage for more sustainable 48 V DC–DC converters
In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver,
level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed …
level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed …