Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …

Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Abstract Large‐area 2D‐material‐based devices may find applications as sensor or
photonics devices or can be incorporated in the back end of line (BEOL) to provide …

The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Downsizing silicon‐based transistors can result in lower power consumption, faster speeds,
and greater computational capacity, although it is accompanied by the appearance of short …

Two-dimensional (2D) rare-earth oxyhalides (REOXs) with novel properties offer fascinating
opportunities for fundamental research and applications. The preparation of 2D REOX …

The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …

The development of flexible and stretchable devices is crucial for realizing future electronics.
In particular, for dielectric layer, conventional inorganic materials are limited by their brittle …

The 2-D semiconductors have been recognized as promising channel materials for the
ultimately scaled transistor technologies beyond silicon. An essential technology enabler for …

ABSTRACT Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold immense
promise as ultrathin-body semiconductors for cutting-edge electronics and optoelectronics …