Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The physical and chemical properties of low-dimensional structures depend on their size
and shape, and can be very different from those of bulk matter. If such structures have at …

In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-
grown GeSn layers with Sn content in the range 6.4–12.6 at.%. A positive deviation from …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Three-dimensional islanding is generally assumed to proceed through nucleation and
growth. Here we present studies showing the growth of Si 1− x Ge x islands (0.2< x< 0.6) …

We study the morphology of symmetric diblock copolymer films with thicknesses below the
bulk equilibrium period supported by both flat and corrugated substrates. In this thickness …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

Relaxed SiGe thin films are used as templates to control the nucleation of three-dimensional
Ge islands on Si (100) substrates. Using the relaxed template, Ge islands form a rectangular …