Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Y Si, T Zhang, C Liu, S Das, B Xu, RG Burkovsky… - Progress in Materials …, 2024 - Elsevier
Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …

PbHfO3-based antiferroelectric materials: Fundamentals, properties, and advanced applications

DL Li, XG Tang, SF Li, XB Guo, D Zhang, QJ Sun… - Chemical Engineering …, 2024 - Elsevier
The potential applications of the PbHfO 3-based antiferroelectric material in the fields of
energy storage, electrocaloric effects, and synaptic devices have garnered significant …

Phase transitions in lead hafnate under high pressure

MA Knyazeva, DA Andronikova, GA Lityagin… - Physics of the Solid …, 2019 - Springer
The effect of hydrostatic pressure on phase transitions in lead hafnate (PbHfO 3) has been
studied by the methods of X-ray diffraction and X-ray diffuse scattering. The measurements …

Effect of Sn addition on thermodynamic, dielectric, optical, and acoustic properties of lead hafnate

A Piekara, JH Ko, JW Lee, SFUH Naqvi… - … status solidi (a), 2020 - Wiley Online Library
Specific heat, dielectric properties, domain structure, and Brillouin light scattering studies in
antiferroelectric PbHf1− xSnxO3 single crystals with three different concentrations (x= 0.08 …

Vibrational properties of PbHf0. 975Sn0. 025O3 single crystal at high pressures

I Jankowska-Sumara, JT Hong, BW Lee… - Journal of Applied …, 2019 - pubs.aip.org
Antiferroelectric PbHf 0.975 Sn 0.025 O 3 single crystals were studied at room temperature
by Raman scattering at pressures up to 16 GPa using a diamond anvil cell. Two phase …

Broadening of X-ray reflections and inhomogeneous strain distribution in PbZrO3/SrRuO3/SrTiO3 epitaxial heterostructures

GA Lityagin, AF Vakulenko, R Gao… - Journal of Physics …, 2019 - iopscience.iop.org
Antiferroelectric thin film heterostructures are important in energy storage technology and
have prospective applications in domain wall nanoelectronics. The improvement of …

[HTML][HTML] Machine learning application for prediction of sapphire crystals defects

YV Klunnikova, MV Anikeev, AV Filimonov… - Journal of Electronic …, 2020 - Elsevier
We investigate the impact of different numbers of positive and negative examples on
machine learning for sapphire crystals defects prediction. We obtain the models of crystal …

Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method

YV Klunnikova, MV Anikeev… - Journal of Physics …, 2019 - iopscience.iop.org
In this article we present an integrated approach to sapphire crystals growth simulation.
Thermally induced stresses in sapphire crystals growing by horizontal directed …

[BOK][B] Метод конечных элементов для моделирования устройств и систем

Ю Клунникова, С Малюков, М Аникеев - 2022 - books.google.com
В учебном пособии излагаются основы метода конечных элементов, являющегося
одним из эффективных методов численного решения инженерных задач при …

Clarification of the Phase Diagram of PbHfO3 in Pressure-temperature Space

M Kniazeva, Y Bronvald, D Andronikova… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
We report the high-temperature and high-pressure single-crystal x-ray diffraction study of
PbHfO3. The increase of pressure enables an additional intermediate phase, located …