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Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
PbHfO3-based antiferroelectric materials: Fundamentals, properties, and advanced applications
DL Li, XG Tang, SF Li, XB Guo, D Zhang, QJ Sun… - Chemical Engineering …, 2024 - Elsevier
The potential applications of the PbHfO 3-based antiferroelectric material in the fields of
energy storage, electrocaloric effects, and synaptic devices have garnered significant …
energy storage, electrocaloric effects, and synaptic devices have garnered significant …
Phase transitions in lead hafnate under high pressure
MA Knyazeva, DA Andronikova, GA Lityagin… - Physics of the Solid …, 2019 - Springer
The effect of hydrostatic pressure on phase transitions in lead hafnate (PbHfO 3) has been
studied by the methods of X-ray diffraction and X-ray diffuse scattering. The measurements …
studied by the methods of X-ray diffraction and X-ray diffuse scattering. The measurements …
Effect of Sn addition on thermodynamic, dielectric, optical, and acoustic properties of lead hafnate
A Piekara, JH Ko, JW Lee, SFUH Naqvi… - … status solidi (a), 2020 - Wiley Online Library
Specific heat, dielectric properties, domain structure, and Brillouin light scattering studies in
antiferroelectric PbHf1− xSnxO3 single crystals with three different concentrations (x= 0.08 …
antiferroelectric PbHf1− xSnxO3 single crystals with three different concentrations (x= 0.08 …
Vibrational properties of PbHf0. 975Sn0. 025O3 single crystal at high pressures
Antiferroelectric PbHf 0.975 Sn 0.025 O 3 single crystals were studied at room temperature
by Raman scattering at pressures up to 16 GPa using a diamond anvil cell. Two phase …
by Raman scattering at pressures up to 16 GPa using a diamond anvil cell. Two phase …
Broadening of X-ray reflections and inhomogeneous strain distribution in PbZrO3/SrRuO3/SrTiO3 epitaxial heterostructures
GA Lityagin, AF Vakulenko, R Gao… - Journal of Physics …, 2019 - iopscience.iop.org
Antiferroelectric thin film heterostructures are important in energy storage technology and
have prospective applications in domain wall nanoelectronics. The improvement of …
have prospective applications in domain wall nanoelectronics. The improvement of …
[HTML][HTML] Machine learning application for prediction of sapphire crystals defects
We investigate the impact of different numbers of positive and negative examples on
machine learning for sapphire crystals defects prediction. We obtain the models of crystal …
machine learning for sapphire crystals defects prediction. We obtain the models of crystal …
Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method
In this article we present an integrated approach to sapphire crystals growth simulation.
Thermally induced stresses in sapphire crystals growing by horizontal directed …
Thermally induced stresses in sapphire crystals growing by horizontal directed …
[BOK][B] Метод конечных элементов для моделирования устройств и систем
Ю Клунникова, С Малюков, М Аникеев - 2022 - books.google.com
В учебном пособии излагаются основы метода конечных элементов, являющегося
одним из эффективных методов численного решения инженерных задач при …
одним из эффективных методов численного решения инженерных задач при …
Clarification of the Phase Diagram of PbHfO3 in Pressure-temperature Space
M Kniazeva, Y Bronvald, D Andronikova… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
We report the high-temperature and high-pressure single-crystal x-ray diffraction study of
PbHfO3. The increase of pressure enables an additional intermediate phase, located …
PbHfO3. The increase of pressure enables an additional intermediate phase, located …