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Spin transport and relaxation in germanium
K Hamaya, Y Fujita, M Yamada… - Journal of Physics D …, 2018 - iopscience.iop.org
This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …
electrical spin injection from ferromagnets (FM), where Ge is a next generation …
Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives
Spintronic devices are of fundamental interest for their nonvolatility and great potential for
low-power electronics applications. The implementation of those devices usually favors …
low-power electronics applications. The implementation of those devices usually favors …
[HTML][HTML] Intrinsic spin transport properties observed in contamination-free graphene-based spin valve
J Zhou, X Lu, J Yang, X Zhang, Q Liu, Q Zeng, Y Yan… - Carbon, 2024 - Elsevier
Graphene-based spintronics has attracted great interest while the spin transport and
relaxation in clean graphene at low temperatures are still unrevealed. Here, we present an …
relaxation in clean graphene at low temperatures are still unrevealed. Here, we present an …
Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes
K Kasahara, Y Fujita, S Yamada, K Sawano… - Applied Physics …, 2014 - iopscience.iop.org
We show nonlocal spin transport in n-Ge-based lateral spin-valve devices with highly
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …
Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors
In this Letter, we report the electrical spin injection and detection in Ge nanowire transistors
with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal …
with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal …
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …
Spin transport and precession in graphene measured by nonlocal and three-terminal methods
We investigate the spin transport and precession in graphene by using the Hanle effect in
nonlocal and three-terminal measurement geometries. Identical spin lifetimes, spin diffusion …
nonlocal and three-terminal measurement geometries. Identical spin lifetimes, spin diffusion …
Temperature-independent spin relaxation in heavily doped -type germanium
Y Fujita, M Yamada, S Yamada, T Kanashima… - Physical Review B, 2016 - APS
We experimentally study the spin relaxation mechanism in heavily doped n-type germanium
(Ge) layers by electrically detecting pure spin current transport. The spin diffusion length (λ …
(Ge) layers by electrically detecting pure spin current transport. The spin diffusion length (λ …
Imaging spin diffusion in germanium at room temperature
We report on the nonlocal detection of optically oriented spins in lightly n-doped germanium
at room temperature. Localized spin generation is achieved by scanning a circularly …
at room temperature. Localized spin generation is achieved by scanning a circularly …