Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal.
Nanowires enable the local integration of high-quality III-V material, but advanced devices …

Broadband photodetectors based on TiO2 nanotubes (NTs) array have significant prospects
in many fields such as environmental monitoring. Herein, a simple spin‐coating process is …

Develo** uncooled photodetectors at midwavelength infrared (MWIR) is critical for various
applications including remote sensing, heat seeking, spectroscopy, and more. In this study …

Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …

Abstract Two-dimensional (2D) nanostructures, bismuth telluride (Bi 2 Te 3), as represented
by one of the topological insulators (TI) materials, have attracted tremendous interests from …

Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …

Artificial leaves could be the breakthrough technology to overcome the limitations of storage
and mobility through the synthesis of chemical fuels from sunlight, which will be an essential …

In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared
(SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays …

Circular polarization discrimination is desired for use in many optoelectronic applications. By
integrating asymmetric metamaterials with active materials, circular‐polarization …

In this paper, an ultraviolet (UV) photodiode in pn heterojunction configuration is fabricated
from TiO 2 nanorods hydrothermally deposited on p-type silicon substrate. Under UV …