Recently, high-performance III–V semiconductor nanowires (NWs) have been extensively
explored as promising active material candidates for high-sensitivity and broad-spectrum …

Abstract 1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental
physics and promising applications of high‐performance room‐temperature infrared (IR) …

Controlled synthesis of lead halide perovskite (LHP) nanostructures not only benefits
fundamental research but also offers promise for applications. Among many synthesis …

Low-dimensional all-inorganic metal halide perovskites have been demonstrated as
excellent building blocks for high-performance optoelectronic devices. Although many …

Antimonide-based ternary III–V nanowires (NWs) allow for a tunable bandgap over a wide
range, which is highly interesting for optoelectronics applications, and in particular for …

Although various device structures based on GaSb nanowires have been realized, further
performance enhancement suffers from uncontrolled radial growth during the nanowire …

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-
performance p-type transistors; however, due to the difficulty in achieving thin and uniform …

Due to their excellent properties, ternary GaAsxSb1− x nanowires have been extensively
investigated to enable various nanodevice structures. However, the surfactant effect of …

The amalgamation of high-strained core/shell geometries in nanowire (NW) heterostructures
with bandgap engineering enables the systems with novel transport and optical properties …

The relative low hole mobility of p‐channel building block device challenges the continued
miniaturization of modern electronic chips. Metal‐semiconductor junction is always an …